? 2005 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces t j = 25 c 100 a v ge = 0 v t j = 125 c 3.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i ce90 , v ge = 15 3.5 v t j = 125 c 2.7 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c30a i c90 t c = 90 c15a i cm t c = 25 c, 1 ms 60 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 170 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. weight to-220 4 g to-263 2 g ds99417(05/05) features ? international standard packages jedec to-220ab and to-263aa ? low switching losses ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies advantages ? easy to mount with one screw ? reduces assembly time and cost ? high power density g e c (tab) to-263 aa (ixga) g c e to-220ab (ixgp) v ces =1200 v i c25 = 30 a v ce(sat) = 3.5 v t fi(typ) = 137 ns ixga 15n120b2 ixgp 15n120b2 hiperfast tm igbt optimized for 10-25 khz hard switching and up to 150 khz resonant switching
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 to-263 aa outline 1. gate 2. collector 3. emitter 4. collector bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 pins: 1 - gate 2 - collector 3 - emitter 4 - collector bottom side to-220 ab dimensions symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 12 15 s pulse test, t 300 s, duty cycle 2 % c ies 1700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 95 pf c res 38 pf q g 86 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 13 nc q gc 26 nc t d(on) 25 ns t ri 15 ns t d(off) 165 240 ns t fi 137 255 ns e off 1.4 2.3 mj t d(on) 25 ns t ri 18 ns e on 0.60 mj t d(off) 260 ns t fi 305 ns e off 2.8 mj r thjc 0.75 k/w r thck to-220 0.5 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 960 v, r g = r off = 10 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 960 v, r g = r off = 10 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixga 15n120c ixgp 15n120c min. recommended footprint (dimensions in inches and mm)
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